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1. general description the TEA1995T is the first product of a new generation of synchronous rectifier (sr) controller ics for switched mo de power supplies. it incorporates an adaptive gate drive method for maximum efficiency at any load. the TEA1995T is a dedicated controller ic for synchronous rectification on the secondary side of resonant converters. it has two driver stages for driving the sr mosfets, which rectify the outputs of the central tap secondary transformer windings. the two gate driver stages have their own sensing in puts and operate independently. the TEA1995T can also be used in multi-output flyback converters with the sr mosfet placed at the low side. the TEA1995T is fabricated in a silicon-on-insulator (soi) process. 2. features and benefits 2.1 efficiency features ? adaptive gate drive for maximum efficiency at any load ? supply current in energy save operation below 200 ? a 2.2 application features ? wide supply voltage range from 4.5 v to 38 v ? dual synchronous rectification for llc resonant in so8 package ? synchronous rectification for mu lti-output flyback converters ? supports 5 v operation wit h logic level sr mosfets ? differential inputs for sensing the drain and source voltages of each sr mosfet 2.3 control features ? sr control without minimum on-time ? adaptive gate drive for fast turn-off at the end of conduction ? undervoltage lockout (uvlo) protection with active gate pull-down TEA1995T greenchip dual synchronou s rectifier controller rev. 1 ? 30 july 2015 product data sheet
TEA1995T all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 1 ? 30 july 2015 2 of 17 nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller 3. applications the TEA1995T is intended for resonant power supplies. in such applications, it can drive two external synchronous rectifier mosfets for the rectification of the voltages on the two secondary windings of the transformer. these mosfets replace diodes. it can be used in all power supplies requiring high efficiency: ? adapters ? power supplies for desktop pc and all-in-one pc ? power supplies for television ? power supplies for servers 4. ordering information table 1. ordering information type number package name description version TEA1995T/n1 so8 plastic small outline pack age; 8 leads; body width 3.9 mm sot96-1
TEA1995T all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 1 ? 30 july 2015 3 of 17 nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller 5. block diagram fig 1. TEA1995T block diagram ddd 9$1', 5()(5(1&( 9 5(*8/$725 '5,9(5 6833/< 9 hqdeoh 81'(5 92/7$*( /2&.287 (1(5*<6$9( &21752/ 785121 riiuhjxodwlrq rquhjxodwlrq wxuqrq '6$ 66$ '6% 66% *'$ 9&& 6:,7&+2)) p9 p9 p9 p9 /2*,& ,& 785121 riiuhjxodwlrq rquhjxodwlrq wxuqrq *'% *1' 6:,7&+2)) p9 p9 p9 p9
TEA1995T all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 1 ? 30 july 2015 4 of 17 nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller 6. pinning information 6.1 pinning 6.2 pin description fig 2. TEA1995T pin configuration (so8) ,& *'% *'$ *1' 9 && '6% '6$ 66% 66$ ddd table 2. pin description symbol pin description gdb 1 gate drive output mosfet b gnd 2 ground dsb 3 drain sense input for synchronous timing mosfet b ssb 4 source sense input mosfet b ssa 5 source sense input mosfet a dsa 6 drain sense input for synchronous timing mosfet a v cc 7 supply voltage gda 8 gate drive output mosfet a
TEA1995T all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 1 ? 30 july 2015 5 of 17 nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller 7. functional description 7.1 introduction the TEA1995T is a controller ic for synchronou s rectification. it is perfectly suited to be used in resonant applications. it can driv e two synchronous rectifier mosfets on the secondary side of the central tap transformer winding. figure 3 shows a typical configuration. 7.2 start-up and undervoltage lockout (v cc pin) when the voltage on the v cc pin exceeds v start , the ic leaves the uvlo state and activates the sr circuitry. when the voltage drops to below v stop , the ic reenters the uvlo state. the sr mosfet gate driver ou tputs are actively kept low. for proper operation, the v cc pin must be decoupled with an extr a capacitor (not only with c out ) between the v cc pin and the gnd pin. to reduce inductance effects because of high gate driver currents, the extra capacitor must be connected as close as possible to the ic. 7.3 drain sense (dsa and dsb pins) the drain sense pins are input pins capable of handling input voltages up to 100 v. at positive drain sense voltages, the gate driver is in off-mode with pulled-down gate driver pins (pins gda or gdb). at negative drain se nse voltages, the ic enables the sr through sensing the drain source differential voltage. fig 3. TEA1995T typical configuration ddd '6$ *'$ 66$ '6% 9 && *'% 66% *1' 4 sulp & +% 4 sulp 4 vhf 35,0$5< 6,'( &21752//(5 ,& 9 lq 9 rxw 75 ,& 4 vhf & rxw
TEA1995T all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 1 ? 30 july 2015 6 of 17 nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller 7.4 synchronous rectification (sr; dsa, ssa, dsb, and ssb pins) the ic senses the voltage difference betwee n the drain sense (pins dsa and dsb) and the source sens e (pins ssa and ssb) connections. the drain source diff erential voltage of the sr mosfet is used to dr ive the gate of the sr mosfet. when this absolute voltage difference is higher than v act(drv) , the corresponding gate driver output turns on the external sr mosfet. when the external sr mosfet is switched on, the absolute voltage difference between the drain and the source sense connections drops to below v act(drv) . the regulation phase follows the turn-on phase. in the regulation phase, the ic regulates the difference between the drain and the source sense inputs to an absolute level (v reg(drv) ). when the absolute difference is higher than v reg(drv) , the gate driver output increases the gate voltage of the external sr mosfet until the v reg(drv) level is reached. the sr mosfet does not switch off at low currents. the ic operates without minimum on-time. when the absolute difference is lower than v deact(drv) , the gate driver output decreases the gate voltage of the external sr mosfet. the voltage waveform on the gate of the sr mosfet follows the waveform of the current through the sr mosfet. when the current through the external sr mosfet reaches zero , the sr mosfet is quickly switched off. after the sr mosfet switch-off, the drain voltage increases. for a drain voltage above v swoff , a low ohmic gate pull-down of r pd(g) keeps the gate of the sr mosfet switched off.
TEA1995T all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 1 ? 30 july 2015 7 of 17 nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller 7.5 gate driver (g da and gdb pins) the gate driver circuit charges the gate of t he external sr mosfet during the rising part of the current. the driver circuit discharges the gate during the falling part of the current. the gate driver has a source capability of typically i source and a sink capability of typically i sink . the source and sink capabilit y allow a fast turn-on and a fa st turn-off of the external sr mosfet. the maximum driver output voltage is limited to v g(max) . this high output voltage drives all mosfet brands to the minimum on-state resistance. in applications where the ic is supplied with 5 v, the maximum output voltage of the driver is limited to 5 v and logic level sr mosfets can be used. during start-up conditions (v cc TEA1995T all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 1 ? 30 july 2015 8 of 17 nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller 7.6 source sense connectio n (ssa and ssb pins) the ic is equipped wi th additional source sense pins (ssa and ssb). these pins are used for the measurement of the sr mosfet drain-to-source voltage. the source sense input must be connected as close as possible to the source pin of the external sr mosfet. it minimizes errors caused by voltage difference on pcb tracks because of parasitic inductance in combin ation with large di/dt values. 8. limiting values [1] these pins are output pins that are forced by the ic (see table 5 ) [2] human body model: equivalent to discharging a 100 pf capacitor through a 1.5 k ? series resistor. [3] charged device model: equivalent to charging the ic and discharging each pin over a 1 ? resistor. 9. thermal characteristics table 3. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit voltages v cc supply voltage ? 0.4 +38 v v sense(d)a drain sense voltage a dc ? 0.8 +100 v v sense(d)b drain sense voltage b dc ? 0.8 +100 v v sense(s)a source sense voltage a dc ? 0.4 +0.4 v v sense(s)b source sense voltage b dc ? 0.4 +0.4 v v gda voltage on pin gda dc [1] ? 0.4 +13.0 v v gdb voltage on pin gdb dc [1] ? 0.4 +13.0 v general p tot total power dissipation - 0.5 w f max maximum frequency if not limited by p tot - 500 khz t stg storage temperature ? 55 +150 ?c t j junction temperature ? 40 +150 ?c electrostatic discharge (esd) v esd electrostatic discharge voltage human body model (hbm) [2] -2000v charged device model (cdm) [3] -500v table 4. thermal characteristics symbol parameter conditions typ unit r th(j-a) thermal resistance from junction to ambient jedec test board 140 k/w
TEA1995T all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 1 ? 30 july 2015 9 of 17 nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller 10. characteristics table 5. characteristics t amb =25 ? c; v cc =12v; c gda /c gdb = 10 nf (capacitors between gda and gnd and between gdb and gnd). all voltages are measured with respect to ground (pin 2). currents are po sitive when flowing into the ic, unless otherwise specified. symbol parameter conditions min typ max unit supply voltage management (pin v cc ) v start start voltage 4.35 4.55 4.75 v v stop stop voltage 4.0 4.2 4.4 v i cc(oper) operating supply current energy-save 140 160 180 ? a normal operation (without gate charge) 0.9 1.1 1.3 ma t act(es) energy save mode activation time 85 110 135 ? s synchronous rectification sense input (pins dsa, ssa, dsb, and ssb) v act(drv) driver activation voltage v sense(s)a /v sense(s)b =0v ? 450 ? 400 ? 350 mv v reg(drv) driver regulation voltage v sense(s)a /v sense(s)b =0v ? 60 ? 55 ? 50 mv v swoff switch-off voltage v sense(s)a /v sense(s)b = 0 v 90 150 200 mv t d(act)(drv) driver activation delay time v sense(s)a /v sense(s)b =0v; normal operation; time from step on v dsa /v dsb (2 v to ? 0.5 v) to rising of v gda /v gdb at 10 % of end value -80- ns t d(deact)(drv) driver deactivation delay time v sense(s)a /v sense(s)b =0v; normal operation; time from step on v dsa /v dsb (? 0.5vto2v) to falling of v gda /v gdb at 90 % of begin value -40- ns gate driver (pins gda and gdb) i source source current peak current at v cc =5v; v ds = ? 0.5 v; v g =0v - ? 0.4 - a peak current at v cc =12v; v ds = ? 0.5 v; v g =0v - ? 1.0 - a i sink sink current regulation current at v cc =5v; v ds =0v; v g =5v -90- ma regulation current at v cc =12v; v ds =0v; v g =10v -100- ma peak current at v cc =5v; v ds =4v; v g =4v -0.6- a peak current at v cc =12v; v ds =4v; v g =4v -1.0- a r pd(g) gate pull-down resistance in off-state; v dsa /v dsb =4v; i gda /i gdb =30ma; v cc =12v 3.2 4 5 ? v g(max) maximum gate voltage v gda /v gdb at v cc = 5 v 4.9 4.95 5.0 v v gda /v gdb at v cc = 12 v 10.5 10.75 11.0 v v gda /v gdb at v cc = 15 v to 38 v 11 12 13 v
TEA1995T all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 1 ? 30 july 2015 10 of 17 nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller 11. application information a resonant switched mode power supply with the TEA1995T consists of a primary side half-bridge, a transformer, a resonant capaci tor, and an output stage. to obtain low conduction loss rectification, sr mosfets are used in the output stage. the TEA1995T controls these sr mosfets. the gate drive voltage for the sr switch is derived from the voltage difference between the corresponding drain sense and source sense pins. special attention must be paid to the connection of the drain sense and source sense pins. the voltages measured on these pins are used for gate drive voltage. wrong measurement results in a less efficient gate drive because the gate voltage is either too low or too high. the connections to these pi ns must not interfere with the power wiring. the power wiring conducts currents with hi gh di/dt values. it can easily cause measurement errors resulting from induced voltages due to parasitic inductances. the separate source-sense pins enable the direct se nsing of the source voltage of the external mosfets. using the current carrying power ground tracks is not allowed. 11.1 application diagram resonant application fig 5. typical resonant ap plication with TEA1995T ddd '6$ *'$ 66$ '6% 9 && *'% 66% *1' 4 sulp & +% 4 sulp 4 vhf 35,0$5< 6,'( &21752//(5 ,& 9 lq 9 rxw 75 ,& 4 vhf & rxw
TEA1995T all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 1 ? 30 july 2015 11 of 17 nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller 11.2 application diagram mult i-output flyback application fig 6. multi-output flyback application with TEA1995T ddd '6$ *'$ 66$ '6% 9 && *'% 66% *1' 4 sulp 4 vhf 35,0$5< 6,'( &21752//(5 ,& 9 lq 9 rxw 9 rxw 75 ,& 4 vhf & rxw & rxw
TEA1995T all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 1 ? 30 july 2015 12 of 17 nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller 12. package outline fig 7. package outline sot96-1 (so8) 81,7 $ pd[ $ $ $ e s f ' ( h + ( / / s 4 = \ z y 5()(5(1&(6 287/,1( 9(56,21 (8523($1 352-(&7,21 ,668('$7( ,(& -('(& -(,7$ pp lqfkhv r r ',0(16,216lqfkglphqvlrqvduhghulyhgiurpwkhruljlqdoppgl phqvlrqv 1rwhv 3odvwlfruphwdosurwuxvlrqvripplqfkpd[lpxp shuvlghduhqrwlqfoxghg 3odvwlfruphwdosurwuxvlrqvripplqfkpd[lpxp shuvlghduhqrwlqfoxghg 627 ; z 0 $ $ $ e s ' + ( / s 4 ghwdlo; ( = h f / y 0 $ $ $ slqlqgh[ \ ( 06 pp vfdoh 62sodvwlfvpdoorxwolqhsdfndj hohdgverg\zlgwkpp 627
TEA1995T all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 1 ? 30 july 2015 13 of 17 nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller 13. abbreviations table 6. abbreviations acronym description sr synchronous rectification mosfet metal-oxide-semiconductor field-effect transistor soi silicon-on-insulator uvlo undervoltage lockout esd electrostatic discharge hbm human body model cdm charged device model
TEA1995T all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 1 ? 30 july 2015 14 of 17 nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller 14. revision history table 7. revision history document id release date data sheet status change notice supersedes TEA1995T v.1 20150730 product data sheet - -
TEA1995T all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 1 ? 30 july 2015 15 of 17 nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller 15. legal information 15.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 15.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 15.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
TEA1995T all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 1 ? 30 july 2015 16 of 17 nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 15.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. greenchip ? is a trademark of nxp semiconductors n.v. 16. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors TEA1995T greenchip dual synchronous rectifier controller ? nxp semiconductors n.v. 2015. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 30 july 2015 document identifier: TEA1995T please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 17. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 2.1 efficiency features . . . . . . . . . . . . . . . . . . . . . . 1 2.2 application features . . . . . . . . . . . . . . . . . . . . . 1 2.3 control features . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 4 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 functional description . . . . . . . . . . . . . . . . . . . 5 7.1 introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.2 start-up and undervoltage lockout (v cc pin) . . 5 7.3 drain sense (dsa and dsb pins). . . . . . . . . . . 5 7.4 synchronous rectific ation (sr; dsa, ssa, dsb, and ssb pins) . . . . . . . . . . . . . . . . . . . . . 6 7.5 gate driver (gda and gdb pins) . . . . . . . . . . . 7 7.6 source sense connection (ssa and ssb pins) 8 8 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 thermal characteristics . . . . . . . . . . . . . . . . . . 8 10 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 application information. . . . . . . . . . . . . . . . . . 10 11.1 application diagram resonant application . . . . 10 11.2 application diagram multi-output flyback application . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 13 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 15 legal information. . . . . . . . . . . . . . . . . . . . . . . 15 15.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 15.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 15.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 15.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 16 contact information. . . . . . . . . . . . . . . . . . . . . 16 17 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

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